s mhop microelectronics c orp. a STD12L01 symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 100v 12a 160 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.3 www.samhop.com.tw oct,29,2010 1 details are subject to change without notice. t c =25 c g g s s d d s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2.5 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 25 12 35 50 g r e r r p p r p p o r r
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 120 g fs s c iss 520 pf c oss 47 pf c rss 29 pf q g 15.5 nc 12.2 18 4 t d(on) 7.8 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =6a v ds =10v , i d =6a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 160 c f=1.0mhz c STD12L01 ver 1.3 www.samhop.com.tw oct,29,2010 2 v sd nc q gs nc q gd 1.9 2.9 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =6a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.775 1.3 v notes v ds =50v,i d =6a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 2 2.8 4 5
STD12L01 ver 1.3 www.samhop.com.tw oct,29,2010 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 15 12 9 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 10 8 6 4 2 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 240 200 160 120 80 40 1 369 15 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =6a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 3 v gs =10v 12 1 v gs =5v v gs =6v v gs =7v v gs =8v
STD12L01 ver 1.3 www.samhop.com.tw oct,29,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 10 1 0.1 80 v gs =10v single pulse t a =25 c r d s (on) limit 420 350 280 210 140 70 0 24 68 10 0 125 c 75 c 25 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c ciss coss crss 900 750 600 450 300 150 0 10 15 20 25 30 0 5 i d =6a 10 8 6 4 2 0 01.53.0 4.5 6.0 7.5 9.0 10.5 12.0 v ds =50v i d =6a 110 100 1 10 100 300 vds=50v,id=1a vgs=10v td(on) tr td(off ) tf dc 10 m s 1ms 100us
t p v (br )dss i as figure 13b. STD12L01 ver 1.3 www.samhop.com.tw oct,29,2010 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STD12L01 ver 1.3 www.samhop.com.tw oct,29,2010 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
STD12L01 ver 1.3 www.samhop.com.tw oct,29,2010 7 to-251 tube to-251 tube 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 "a" 540 1.5 + 2~ ? 3.0 4.5 5.5 unit: n n
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